Design and epitaxy of 15 μm InGaAsP-InP MQW material for a transistor laser

A Monolithic MQW InP–InGaAsP-Based Optical Comb Generator

We report the first demonstration of a monolithic optical-frequency comb generator. The device is based on multisection quaternary/quaternary eight-quantum-well InP–InGaAsP material in a frequency-modulated (FM) laser design. The modulation is generated using quantum-confined Stark-effect phase-induced refractive index modulation to achieve fast modulation up to 24.4 GHz. The laser was fabricat...

Optimization of InGaAs/InGaAsP MQW mqw semiconductor amplifiers

DESIGN AND PROPERTIES OF InGaAs/InGaAsP/InP AVALANCHE PHOTODIODE

An avalanche photodiode (APD) based on an InGaAs/InGaAsP/InP structure containing separated absorption, charge and multiplication layers (SACM) was designed, fabricated and tested. The InGaAsP charge layer at the heterointerface between the InGaAs absorption and InP multiplication region allows optimization of the electric field distribution and suppression of the carrier capture at the heteroi...

Epitaxial InGaAsP/InP photodiode for registration of InP scintillation

Operation of semiconductor scintillators requires optically tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially grown on the surface of an InP scintillator wafer and sensitive to InP luminescence. The diode is characterized by an extremely low room-temperature dark current...

Integrated InGaAsP MQW Mach-Zehnder modulator

We demonstrate the use of an area selective zinc in-diffusion process as a simple and efficient technique for the fabrication of integrated photonic devices. By controlling the profile of the diffusion front and the zinc depth the insertion losses of the devices can be minimized. Using this technique an integrated 1 2 Mach–Zehnder analog modulator was fabricated. Our experimental results demons...